IXTH10N100D
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IXTH10N100D

IXYS

型号:

IXTH10N100D

品牌:

IXYS

封装:

TO-247 (IXTH)

批次:

-

数据手册:

pdf

描述:

MOSFET N-CH 1000V 10A TO247

购买数量:

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产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature Depletion Mode
Input Capacitance (Ciss) (Max) @ Vds 2500 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 130 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 1.4Ohm @ 10A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3.5V @ 250µA
Supplier Device Package TO-247 (IXTH)
Drain to Source Voltage (Vdss) 1000 V
Power Dissipation (Max) 400W (Tc)
Series Depletion
Package / Case TO-247-3
Technology MOSFET (Metal Oxide)
Mfr IXYS
Current - Continuous Drain (Id) @ 25°C 10A (Tc)
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number IXTH10