IXFP34N65X2M

IXYS

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IXFP34N65X2M

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Package:

TO-220 Isolated Tab

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Description:

MOSFET N-CH 650V 34A TO220

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	3230 pF @ 25 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	56 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	100mOhm @ 17A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	5V @ 1.5mA
Supplier Device Package	TO-220 Isolated Tab
Drain to Source Voltage (Vdss)	650 V
Power Dissipation (Max)	40W (Tc)
Series	HiPerFET™, Ultra X2
Package / Case	TO-220-3 Full Pack, Isolated Tab
Technology	MOSFET (Metal Oxide)
Mfr	IXYS
Current - Continuous Drain (Id) @ 25°C	34A (Tc)
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	IXFP34