IRFIBE30GPBF
detaildesc

IRFIBE30GPBF

Vishay Siliconix

型号:

IRFIBE30GPBF

封装:

TO-220-3

批次:

-

数据手册:

pdf

描述:

MOSFET N-CH 800V 2.1A TO220-3

购买数量:

递送:

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付款:

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库存 : 1888

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $2.5745

    $2.5745

  • 10

    $2.31515

    $23.1515

  • 100

    $1.897055

    $189.7055

  • 500

    $1.614905

    $807.4525

  • 1000

    $1.361968

    $1361.968

  • 2000

    $1.293872

    $2587.744

  • 5000

    $1.245232

    $6226.16

请发送询价,我们将立即回复。

产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1300 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 78 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 3Ohm @ 1.3A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 250µA
Supplier Device Package TO-220-3
Drain to Source Voltage (Vdss) 800 V
Power Dissipation (Max) 35W (Tc)
Series -
Package / Case TO-220-3 Full Pack, Isolated Tab
Technology MOSFET (Metal Oxide)
Mfr Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C 2.1A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number IRFIBE30