IRFF9130
detaildesc

IRFF9130

Harris Corporation

型号:

IRFF9130

封装:

TO-205AF (TO-39)

批次:

-

数据手册:

pdf

描述:

6.5A, 100V, 0.3OHM, P-CHANNEL MO

购买数量:

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产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 500 pF @ 25 V
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 45 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 300mOhm @ 3A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 250µA
Supplier Device Package TO-205AF (TO-39)
Drain to Source Voltage (Vdss) 100 V
Power Dissipation (Max) 25W (Tc)
Series -
Package / Case TO-205AF Metal Can
Technology MOSFET (Metal Oxide)
Mfr Harris Corporation
Current - Continuous Drain (Id) @ 25°C 6.5A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Bulk