IRFD113PBF
detaildesc

IRFD113PBF

Vishay Siliconix

型号:

IRFD113PBF

封装:

4-HVMDIP

批次:

-

数据手册:

pdf

描述:

MOSFET N-CH 60V 800MA 4DIP

购买数量:

递送:

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付款:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

库存 : 2447

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $1.9855

    $1.9855

  • 10

    $1.6454

    $16.454

  • 100

    $1.30967

    $130.967

  • 500

    $1.108232

    $554.116

  • 1000

    $0.94031

    $940.31

  • 2000

    $0.893294

    $1786.588

  • 5000

    $0.859712

    $4298.56

  • 10000

    $0.83125

    $8312.5

请发送询价,我们将立即回复。

产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 200 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 7 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 800mOhm @ 800mA, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 250µA
Supplier Device Package 4-HVMDIP
Drain to Source Voltage (Vdss) 60 V
Power Dissipation (Max) 1W (Tc)
Series -
Package / Case 4-DIP (0.300", 7.62mm)
Technology MOSFET (Metal Oxide)
Mfr Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C 800mA (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number IRFD113