IRFD110PBF
detaildesc

IRFD110PBF

Vishay Siliconix

型号:

IRFD110PBF

封装:

4-HVMDIP

批次:

-

数据手册:

pdf

描述:

MOSFET N-CH 100V 1A 4DIP

购买数量:

递送:

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付款:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

库存 : 27011

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $1.539

    $1.539

  • 10

    $1.37655

    $13.7655

  • 100

    $1.07331

    $107.331

  • 500

    $0.886635

    $443.3175

  • 1000

    $0.699979

    $699.979

  • 2000

    $0.653315

    $1306.63

  • 5000

    $0.620644

    $3103.22

  • 10000

    $0.597312

    $5973.12

请发送询价,我们将立即回复。

产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 180 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 8.3 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 540mOhm @ 600mA, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 250µA
Supplier Device Package 4-HVMDIP
Drain to Source Voltage (Vdss) 100 V
Power Dissipation (Max) 1.3W (Ta)
Series -
Package / Case 4-DIP (0.300", 7.62mm)
Technology MOSFET (Metal Oxide)
Mfr Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C 1A (Ta)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number IRFD110