IRFBE30PBF-BE3
detaildesc

IRFBE30PBF-BE3

Vishay Siliconix

型号:

IRFBE30PBF-BE3

封装:

TO-220AB

批次:

-

数据手册:

pdf

描述:

MOSFET N-CH 800V 4.1A TO220AB

购买数量:

递送:

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付款:

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库存 : 2809

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $2.052

    $2.052

  • 10

    $1.7062

    $17.062

  • 100

    $1.357835

    $135.7835

  • 500

    $1.148911

    $574.4555

  • 1000

    $0.974833

    $974.833

  • 2000

    $0.926098

    $1852.196

  • 5000

    $0.891271

    $4456.355

  • 10000

    $0.861774

    $8617.74

请发送询价,我们将立即回复。

产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1300 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 78 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 3Ohm @ 2.5A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 250µA
Supplier Device Package TO-220AB
Drain to Source Voltage (Vdss) 800 V
Power Dissipation (Max) 125W (Tc)
Series -
Package / Case TO-220-3
Technology MOSFET (Metal Oxide)
Mfr Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C 4.1A (Tc)
Vgs (Max) ±20V
Package Tube
Base Product Number IRFBE30