IRFBE30LPBF
detaildesc

IRFBE30LPBF

Vishay Siliconix

型号:

IRFBE30LPBF

封装:

I2PAK

批次:

-

数据手册:

pdf

描述:

MOSFET N-CH 800V 4.1A I2PAK

购买数量:

递送:

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付款:

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库存 : 1000

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $2.603

    $2.603

  • 10

    $2.3389

    $23.389

  • 100

    $1.88024

    $188.024

  • 500

    $1.544795

    $772.3975

  • 1000

    $1.279973

    $1279.973

  • 2000

    $1.191699

    $2383.398

  • 5000

    $1.147562

    $5737.81

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产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1300 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 78 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 3Ohm @ 2.5A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 250µA
Supplier Device Package I2PAK
Drain to Source Voltage (Vdss) 800 V
Power Dissipation (Max) 125W (Tc)
Series -
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Technology MOSFET (Metal Oxide)
Mfr Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C 4.1A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number IRFBE30