IRFBE20
detaildesc

IRFBE20

Vishay Siliconix

型号:

IRFBE20

封装:

TO-220AB

批次:

-

数据手册:

pdf

描述:

MOSFET N-CH 800V 1.8A TO220AB

购买数量:

递送:

1.webp 4.webp 5.webp 2.webp 3.webp

付款:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

库存 : 请查询

请发送RFQ,我们将立即回复。

产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 530 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 38 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 6.5Ohm @ 1.1A, 10V
Product Status Obsolete
Vgs(th) (Max) @ Id 4V @ 250µA
Supplier Device Package TO-220AB
Drain to Source Voltage (Vdss) 800 V
Power Dissipation (Max) 54W (Tc)
Series -
Package / Case TO-220-3
Technology MOSFET (Metal Oxide)
Mfr Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C 1.8A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number IRFBE20