HS8K11TB
detaildesc

HS8K11TB

Rohm Semiconductor

型号:

HS8K11TB

封装:

HSML3030L10

批次:

-

数据手册:

pdf

描述:

MOSFET 2N-CH 30V 7A/11A HSML

购买数量:

递送:

1.webp 4.webp 5.webp 2.webp 3.webp

付款:

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库存 : 1374

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $0.5795

    $0.5795

  • 10

    $0.51015

    $5.1015

  • 100

    $0.39083

    $39.083

  • 500

    $0.308959

    $154.4795

  • 1000

    $0.247171

    $247.171

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产品信息

参数信息

用户指南

Operating Temperature 150°C (TJ)
FET Feature Logic Level Gate
Configuration 2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds 500pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 11.1nC @ 10V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 17.9mOhm @ 7A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 1mA
Supplier Device Package HSML3030L10
Drain to Source Voltage (Vdss) 30V
Series -
Package / Case 8-UDFN Exposed Pad
Technology MOSFET (Metal Oxide)
Power - Max 2W
Mfr Rohm Semiconductor
Current - Continuous Drain (Id) @ 25°C 7A, 11A
Package Tape & Reel (TR)
Base Product Number HS8K11