HGTP10N120BN
onsemi
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产品信息
参数信息
用户指南
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Test Condition | 960V, 10A, 10Ohm, 15V |
| Input Type | Standard |
| Switching Energy | 320µJ (on), 800µJ (off) |
| Current - Collector (Ic) (Max) | 35 A |
| Mounting Type | Through Hole |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Product Status | Obsolete |
| Supplier Device Package | TO-220-3 |
| Td (on/off) @ 25°C | 23ns/165ns |
| Current - Collector Pulsed (Icm) | 80 A |
| Series | - |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 10A |
| Gate Charge | 100 nC |
| Package / Case | TO-220-3 |
| Power - Max | 298 W |
| Mfr | onsemi |
| Package | Tube |
| IGBT Type | NPT |
| Base Product Number | HGTP10 |
