HAT1069C-EL-E
detaildesc

HAT1069C-EL-E

Renesas Electronics America Inc

型号:

HAT1069C-EL-E

封装:

6-CMFPAK

批次:

-

数据手册:

pdf

描述:

MOSFET P-CH 12V 4A 6CMFPAK

购买数量:

递送:

1.webp 4.webp 5.webp 2.webp 3.webp

付款:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

库存 : 请查询

请发送RFQ,我们将立即回复。

产品信息

参数信息

用户指南

Operating Temperature 150°C
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1380 pF @ 10 V
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 16 nC @ 4.5 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 52mOhm @ 1.5A, 4.5V
Product Status Obsolete
Vgs(th) (Max) @ Id 1.2V @ 1mA
Supplier Device Package 6-CMFPAK
Drain to Source Voltage (Vdss) 12 V
Power Dissipation (Max) 900mW (Ta)
Series -
Package / Case 6-SMD, Flat Leads
Technology MOSFET (Metal Oxide)
Mfr Renesas Electronics America Inc
Current - Continuous Drain (Id) @ 25°C 4A (Ta)
Vgs (Max) ±8V
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Package Tape & Reel (TR)