GE12160CEA3
detaildesc

GE12160CEA3

GE Aerospace

型号:

GE12160CEA3

品牌:

GE Aerospace

封装:

Module

批次:

-

数据手册:

pdf

描述:

1200V 1425A SiC Half-Bridge

购买数量:

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产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (Tc)
FET Feature Silicon Carbide (SiC)
Configuration 2 N-Channel (Half Bridge)
Input Capacitance (Ciss) (Max) @ Vds 90000pF @ 600V
Gate Charge (Qg) (Max) @ Vgs 3744nC @ 18V
Mounting Type Chassis Mount
Rds On (Max) @ Id, Vgs 1.5mOhm @ 475A, 20V
Product Status Active
Vgs(th) (Max) @ Id 4.5V @ 480mA
Supplier Device Package Module
Drain to Source Voltage (Vdss) 1200V (1.2kV)
Series SiC Power
Package / Case Module
Technology Silicon Carbide (SiC)
Power - Max 3.75kW (Tc)
Mfr GE Aerospace
Current - Continuous Drain (Id) @ 25°C 1.425kA (Tc)
Package Bulk
Base Product Number GE12160