GB10MPS17-247
detaildesc

GB10MPS17-247

GeneSiC Semiconductor

型号:

GB10MPS17-247

封装:

TO-247-2

批次:

-

数据手册:

pdf

描述:

DIODE SIL CARB 1.7KV 50A TO247-2

购买数量:

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产品信息

参数信息

用户指南

Speed No Recovery Time > 500mA (Io)
Capacitance @ Vr, F 669pF @ 1V, 1MHz
Reverse Recovery Time (trr) 0 ns
Mounting Type Through Hole
Product Status Not For New Designs
Supplier Device Package TO-247-2
Current - Reverse Leakage @ Vr 12 µA @ 1700 V
Series SiC Schottky MPS™
Package / Case TO-247-2
Technology SiC (Silicon Carbide) Schottky
Voltage - Forward (Vf) (Max) @ If 1.8 V @ 10 A
Mfr GeneSiC Semiconductor
Voltage - DC Reverse (Vr) (Max) 1700 V
Package Tube
Operating Temperature - Junction -55°C ~ 175°C
Current - Average Rectified (Io) 50A
Base Product Number GB10MPS17