GAN190-650FBEZ
detaildesc

GAN190-650FBEZ

Nexperia USA Inc.

型号:

GAN190-650FBEZ

封装:

DFN5060-5

批次:

-

数据手册:

pdf

描述:

650 V, 190 MOHM GALLIUM NITRIDE

购买数量:

递送:

1.webp 4.webp 5.webp 2.webp 3.webp

付款:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

库存 : 2055

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $4.066

    $4.066

  • 10

    $3.4162

    $34.162

  • 100

    $2.76336

    $276.336

  • 500

    $2.45632

    $1228.16

  • 1000

    $2.103224

    $2103.224

请发送询价,我们将立即回复。

产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 96 pF @ 400 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 2.8 nC @ 6 V
Mounting Type Surface Mount, Wettable Flank
Rds On (Max) @ Id, Vgs 190mOhm @ 3.9A, 6V
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 12.2mA
Supplier Device Package DFN5060-5
Drain to Source Voltage (Vdss) 650 V
Power Dissipation (Max) 125W (Ta)
Series -
Package / Case 8-PowerVDFN
Technology GaNFET (Gallium Nitride)
Mfr Nexperia USA Inc.
Current - Continuous Drain (Id) @ 25°C 11.5A (Ta)
Vgs (Max) +7V, -1.4V
Drive Voltage (Max Rds On, Min Rds On) 6V
Package Tape & Reel (TR)
Base Product Number GAN190