Nexperia USA Inc.
型号:
GAN080-650EBEZ
封装:
DFN8080-8
批次:
-
描述:
650 V, 80 MOHM GALLIUM NITRIDE (
购买数量:
递送:
付款:
最小起订量: 1 最小递增量: 1
数量
单价
总价
1
$8.3695
$8.3695
10
$7.17725
$71.7725
100
$5.980915
$598.0915
500
$5.277307
$2638.6535
1000
$4.749572
$4749.572
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Operating Temperature | -55°C ~ 150°C (TJ) |
FET Feature | - |
Input Capacitance (Ciss) (Max) @ Vds | 225 pF @ 400 V |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 6.2 nC @ 6 V |
Mounting Type | Surface Mount, Wettable Flank |
Rds On (Max) @ Id, Vgs | 80mOhm @ 8A, 6V |
Product Status | Active |
Vgs(th) (Max) @ Id | 2.5V @ 30.7mA |
Supplier Device Package | DFN8080-8 |
Drain to Source Voltage (Vdss) | 650 V |
Power Dissipation (Max) | 240W (Ta) |
Series | - |
Package / Case | 8-VDFN Exposed Pad |
Technology | GaNFET (Gallium Nitride) |
Mfr | Nexperia USA Inc. |
Current - Continuous Drain (Id) @ 25°C | 29A (Ta) |
Vgs (Max) | +7V, -6V |
Drive Voltage (Max Rds On, Min Rds On) | 6V |
Package | Tape & Reel (TR) |
Base Product Number | GAN080 |