GAN080-650EBEZ
detaildesc

GAN080-650EBEZ

Nexperia USA Inc.

型号:

GAN080-650EBEZ

封装:

DFN8080-8

批次:

-

数据手册:

pdf

描述:

650 V, 80 MOHM GALLIUM NITRIDE (

购买数量:

递送:

1.webp 4.webp 5.webp 2.webp 3.webp

付款:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

库存 : 2456

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $8.3695

    $8.3695

  • 10

    $7.17725

    $71.7725

  • 100

    $5.980915

    $598.0915

  • 500

    $5.277307

    $2638.6535

  • 1000

    $4.749572

    $4749.572

请发送询价,我们将立即回复。

产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 225 pF @ 400 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 6.2 nC @ 6 V
Mounting Type Surface Mount, Wettable Flank
Rds On (Max) @ Id, Vgs 80mOhm @ 8A, 6V
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 30.7mA
Supplier Device Package DFN8080-8
Drain to Source Voltage (Vdss) 650 V
Power Dissipation (Max) 240W (Ta)
Series -
Package / Case 8-VDFN Exposed Pad
Technology GaNFET (Gallium Nitride)
Mfr Nexperia USA Inc.
Current - Continuous Drain (Id) @ 25°C 29A (Ta)
Vgs (Max) +7V, -6V
Drive Voltage (Max Rds On, Min Rds On) 6V
Package Tape & Reel (TR)
Base Product Number GAN080