FQP19N10
onsemi
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产品信息
参数信息
用户指南
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 780 pF @ 25 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Mounting Type | Through Hole |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 9.5A, 10V |
| Product Status | Obsolete |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drain to Source Voltage (Vdss) | 100 V |
| Power Dissipation (Max) | 75W (Tc) |
| Series | QFET® |
| Package / Case | TO-220-3 |
| Technology | MOSFET (Metal Oxide) |
| Mfr | onsemi |
| Current - Continuous Drain (Id) @ 25°C | 19A (Tc) |
| Vgs (Max) | ±25V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Package | Tube |
| Base Product Number | FQP1 |
