FQN1N50CTA
onsemi
库存 : 6124
最小起订量: 1 最小递增量: 1
数量
单价
总价
1
$0.57
$0.57
10
$0.49495
$4.9495
100
$0.34238
$34.238
500
$0.286083
$143.0415
1000
$0.243485
$243.485
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产品信息
参数信息
用户指南
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 195 pF @ 25 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 6.4 nC @ 10 V |
| Mounting Type | Through Hole |
| Rds On (Max) @ Id, Vgs | 6Ohm @ 190mA, 10V |
| Product Status | Last Time Buy |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-92-3 |
| Drain to Source Voltage (Vdss) | 500 V |
| Power Dissipation (Max) | 890mW (Ta), 2.08W (Tc) |
| Series | QFET® |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Technology | MOSFET (Metal Oxide) |
| Mfr | onsemi |
| Current - Continuous Drain (Id) @ 25°C | 380mA (Tc) |
| Vgs (Max) | ±30V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Package | Cut Tape (CT) |
| Base Product Number | FQN1N50 |
