FJN3313RTA
onsemi
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产品信息
参数信息
用户指南
| Frequency - Transition | 250 MHz |
| Current - Collector (Ic) (Max) | 100 mA |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Resistor - Base (R1) | 2.2 kOhms |
| Mounting Type | Through Hole |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Product Status | Obsolete |
| Supplier Device Package | TO-92-3 |
| Series | - |
| Transistor Type | NPN - Pre-Biased |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Power - Max | 300 mW |
| Mfr | onsemi |
| Resistor - Emitter Base (R2) | 47 kOhms |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| Package | Tape & Box (TB) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 68 @ 5mA, 5V |
| Base Product Number | FJN331 |
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