FDMS86102LZ
detaildesc

FDMS86102LZ

Fairchild Semiconductor

型号:

FDMS86102LZ

封装:

8-PQFN (5x6)

批次:

-

数据手册:

pdf

描述:

POWER FIELD-EFFECT TRANSISTOR, 7

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产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1305 pF @ 50 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 22 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 25mOhm @ 7A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 250µA
Supplier Device Package 8-PQFN (5x6)
Drain to Source Voltage (Vdss) 100 V
Power Dissipation (Max) 2.5W (Ta), 69W (Tc)
Series PowerTrench®
Package / Case 8-PowerTDFN
Technology MOSFET (Metal Oxide)
Mfr Fairchild Semiconductor
Current - Continuous Drain (Id) @ 25°C 7A (Ta), 22A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Bulk