FDB050AN06A0
detaildesc

FDB050AN06A0

onsemi

型号:

FDB050AN06A0

品牌:

onsemi

封装:

D²PAK (TO-263)

批次:

-

数据手册:

pdf

描述:

MOSFET N-CH 60V 18A/80A D2PAK

购买数量:

递送:

1.webp 4.webp 5.webp 2.webp 3.webp

付款:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

库存 : 102

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $2.394

    $2.394

  • 10

    $2.1489

    $21.489

  • 100

    $1.72691

    $172.691

请发送询价,我们将立即回复。

产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 3900 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 80 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 5mOhm @ 80A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 250µA
Supplier Device Package D²PAK (TO-263)
Drain to Source Voltage (Vdss) 60 V
Power Dissipation (Max) 245W (Tc)
Series PowerTrench®
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology MOSFET (Metal Oxide)
Mfr onsemi
Current - Continuous Drain (Id) @ 25°C 18A (Ta), 80A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Package Tape & Reel (TR)
Base Product Number FDB050