FCP165N65S3R0
detaildesc

FCP165N65S3R0

Fairchild Semiconductor

型号:

FCP165N65S3R0

封装:

TO-220-3

批次:

-

数据手册:

pdf

描述:

FCP165N65S3R0 - POWER MOSFET, N-

购买数量:

递送:

1.webp 4.webp 5.webp 2.webp 3.webp

付款:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

库存 : 2115

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 143

    $1.995

    $285.285

请发送询价,我们将立即回复。

产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1500 pF @ 400 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 39 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 165mOhm @ 9.5A, 10V
Product Status Obsolete
Vgs(th) (Max) @ Id 4.5V @ 440mA
Supplier Device Package TO-220-3
Drain to Source Voltage (Vdss) 650 V
Power Dissipation (Max) 154W (Tc)
Series SuperFET® III
Package / Case TO-220-3
Technology MOSFET (Metal Oxide)
Mfr Fairchild Semiconductor
Current - Continuous Drain (Id) @ 25°C 19A (Tc)
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Bulk