FCB099N65S3
detaildesc

FCB099N65S3

onsemi

型号:

FCB099N65S3

品牌:

onsemi

封装:

D²PAK-3 (TO-263-3)

批次:

-

数据手册:

pdf

描述:

MOSFET N-CH 650V 30A D2PAK-3

购买数量:

递送:

1.webp 4.webp 5.webp 2.webp 3.webp

付款:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

库存 : 496

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $5.529

    $5.529

  • 10

    $4.64075

    $46.4075

  • 100

    $3.75402

    $375.402

请发送询价,我们将立即回复。

产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 2480 pF @ 400 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 61 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 99mOhm @ 15A, 10V
Product Status Not For New Designs
Vgs(th) (Max) @ Id 4.5V @ 740µA
Supplier Device Package D²PAK-3 (TO-263-3)
Drain to Source Voltage (Vdss) 650 V
Power Dissipation (Max) 227W (Tc)
Series SuperFET® III
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology MOSFET (Metal Oxide)
Mfr onsemi
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)
Base Product Number FCB099