EPC2101
detaildesc

EPC2101

EPC

型号:

EPC2101

品牌:

EPC

封装:

Die

批次:

-

数据手册:

pdf

描述:

GAN TRANS ASYMMETRICAL HALF BRID

购买数量:

递送:

1.webp 4.webp 5.webp 2.webp 3.webp

付款:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

库存 : 550

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $8.4075

    $8.4075

  • 10

    $7.2029

    $72.029

  • 100

    $6.00267

    $600.267

请发送询价,我们将立即回复。

产品信息

参数信息

用户指南

Operating Temperature -40°C ~ 150°C (TJ)
FET Feature -
Configuration 2 N-Channel (Half Bridge)
Input Capacitance (Ciss) (Max) @ Vds 300pF @ 30V, 1200pF @ 30V
Gate Charge (Qg) (Max) @ Vgs 2.7nC @ 5V, 12nC @ 5V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 11.5mOhm @ 20A, 5V, 2.7mOhm @ 20A, 5V
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 3mA, 2.5V @ 12mA
Supplier Device Package Die
Drain to Source Voltage (Vdss) 60V
Series eGaN®
Package / Case Die
Technology GaNFET (Gallium Nitride)
Power - Max -
Mfr EPC
Current - Continuous Drain (Id) @ 25°C 9.5A, 38A
Package Tape & Reel (TR)
Base Product Number EPC210