EGL41BHE3_A/H
detaildesc

EGL41BHE3_A/H

Vishay General Semiconductor - Diodes Division

型号:

EGL41BHE3_A/H

封装:

DO-213AB

批次:

-

数据手册:

pdf

描述:

DIODE GEN PURP 100V 1A DO213AB

购买数量:

递送:

1.webp 4.webp 5.webp 2.webp 3.webp

付款:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

库存 : 请查询

请发送RFQ,我们将立即回复。

产品信息

参数信息

用户指南

Speed Fast Recovery =< 500ns, > 200mA (Io)
Capacitance @ Vr, F 20pF @ 4V, 1MHz
Reverse Recovery Time (trr) 50 ns
Mounting Type Surface Mount
Product Status Active
Supplier Device Package DO-213AB
Current - Reverse Leakage @ Vr 5 µA @ 100 V
Series Automotive, AEC-Q101, Superectifier®
Package / Case DO-213AB, MELF (Glass)
Technology Standard
Voltage - Forward (Vf) (Max) @ If 1 V @ 1 A
Mfr Vishay General Semiconductor - Diodes Division
Voltage - DC Reverse (Vr) (Max) 100 V
Package Tape & Reel (TR)
Operating Temperature - Junction -65°C ~ 175°C
Current - Average Rectified (Io) 1A
Base Product Number EGL41