E3M0120090J-TR
detaildesc

E3M0120090J-TR

Wolfspeed, Inc.

型号:

E3M0120090J-TR

封装:

TO-263-7

批次:

-

数据手册:

pdf

描述:

SIC, MOSFET, 120M, 900V, TO-263-

购买数量:

递送:

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产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds 414 pF @ 600 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 18 nC @ 15 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 155mOhm @ 15A, 15V
Product Status Active
Vgs(th) (Max) @ Id 3.5V @ 3mA
Supplier Device Package TO-263-7
Drain to Source Voltage (Vdss) 900 V
Power Dissipation (Max) 83W (Tc)
Series E
Package / Case TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Technology SiC (Silicon Carbide Junction Transistor)
Mfr Wolfspeed, Inc.
Current - Continuous Drain (Id) @ 25°C 22A (Tc)
Vgs (Max) +15V, -4V
Drive Voltage (Max Rds On, Min Rds On) 15V
Package Tape & Reel (TR)