DMWS120H100SM4
Diodes Incorporated
型号:
DMWS120H100SM4
封装:
TO-247-4
批次:
-
数据手册:
描述:
SIC MOSFET BVDSS: >1000V TO247-4
购买数量:
递送:
付款:
库存 : 4
最小起订量: 1 最小递增量: 1
数量
单价
总价
1
$19.1995
$19.1995
10
$16.91095
$169.1095
100
$14.62601
$1462.601
500
$13.254818
$6627.409
请发送询价，我们将立即回复。
产品信息
参数信息
用户指南
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 1516 pF @ 1000 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 52 nC @ 15 V |
| Mounting Type | Through Hole |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 20A, 15V |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 3.5V @ 5mA |
| Supplier Device Package | TO-247-4 |
| Drain to Source Voltage (Vdss) | 1200 V |
| Power Dissipation (Max) | 208W (Tc) |
| Series | - |
| Package / Case | TO-247-4 |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| Mfr | Diodes Incorporated |
| Current - Continuous Drain (Id) @ 25°C | 37.2A (Tc) |
| Vgs (Max) | +19V, -8V |
| Drive Voltage (Max Rds On, Min Rds On) | 15V |
| Package | Tube |
| Base Product Number | DMWS120 |
