首页 / 单 FET,MOSFET / DMTH10H1M7STLWQ-13
DMTH10H1M7STLWQ-13
detaildesc

DMTH10H1M7STLWQ-13

Diodes Incorporated

型号:

DMTH10H1M7STLWQ-13

封装:

POWERDI1012-8

批次:

-

数据手册:

pdf

描述:

MOSFET BVDSS: 61V~100V POWERDI10

购买数量:

递送:

1.webp 4.webp 5.webp 2.webp 3.webp

付款:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

库存 : 1473

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $5.0445

    $5.0445

  • 10

    $4.237

    $42.37

  • 100

    $3.42741

    $342.741

  • 500

    $3.046612

    $1523.306

请发送询价,我们将立即回复。

产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 9871 pF @ 50 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 147 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 2mOhm @ 30A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 250µA
Supplier Device Package POWERDI1012-8
Drain to Source Voltage (Vdss) 100 V
Power Dissipation (Max) 6W (Ta), 250W (Tc)
Series -
Package / Case 8-PowerSFN
Technology MOSFET (Metal Oxide)
Mfr Diodes Incorporated
Current - Continuous Drain (Id) @ 25°C 250A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)
Base Product Number DMTH10