DMN2029UVT-13
Diodes Incorporated
型号:
DMN2029UVT-13
封装:
TSOT-26
批次:
-
数据手册:
描述:
MOSFET N-CH 6.8A TSOT26
购买数量:
递送:
付款:
库存 : 请查询
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产品信息
参数信息
用户指南
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 646 pF @ 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 7.1 nC @ 4.5 V |
| Mounting Type | Surface Mount |
| Rds On (Max) @ Id, Vgs | 24mOhm @ 6.2A, 4.5V |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | TSOT-26 |
| Drain to Source Voltage (Vdss) | 20 V |
| Power Dissipation (Max) | 700mW (Ta) |
| Series | - |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Technology | MOSFET (Metal Oxide) |
| Mfr | Diodes Incorporated |
| Current - Continuous Drain (Id) @ 25°C | 6.8A (Ta) |
| Vgs (Max) | ±10V |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Package | Tape & Reel (TR) |
| Base Product Number | DMN2029 |
