DMN10H170SFG-13
detaildesc

DMN10H170SFG-13

Diodes Incorporated

型号:

DMN10H170SFG-13

封装:

PowerDI3333-8

批次:

-

数据手册:

pdf

描述:

MOSFET N-CH 100V PWRDI3333

购买数量:

递送:

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付款:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

库存 : 2900

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $0.551

    $0.551

  • 10

    $0.47215

    $4.7215

  • 25

    $0.4408

    $11.02

  • 100

    $0.352735

    $35.2735

  • 250

    $0.32756

    $81.89

  • 500

    $0.277153

    $138.5765

  • 1000

    $0.214168

    $214.168

请发送询价,我们将立即回复。

产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 870.7 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 14.9 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 122mOhm @ 3.3A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3V @ 250µA
Supplier Device Package PowerDI3333-8
Drain to Source Voltage (Vdss) 100 V
Power Dissipation (Max) 940mW (Ta)
Series -
Package / Case 8-PowerVDFN
Technology MOSFET (Metal Oxide)
Mfr Diodes Incorporated
Current - Continuous Drain (Id) @ 25°C 2.9A (Ta), 8.5A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number DMN10