CSD87330Q3DT
Texas Instruments
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产品信息
参数信息
用户指南
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | Standard |
| Configuration | 2 N-Channel (Half Bridge) |
| Input Capacitance (Ciss) (Max) @ Vds | 900pF @ 15V, 1632pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs | 5.8nC @ 4.5V, 11.5nC @ 4.5V |
| Mounting Type | Surface Mount |
| Rds On (Max) @ Id, Vgs | 9.45mOhm @ 15A, 5V, 3.6mOhm @ 15A, 5V |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 2.1V @ 250µA, 1.15V @ 250µA |
| Supplier Device Package | 8-LSON (3.3x3.3) |
| Drain to Source Voltage (Vdss) | 30V |
| Series | NexFET™ |
| Package / Case | 8-PowerLDFN |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 6W (Ta) |
| Mfr | Texas Instruments |
| Current - Continuous Drain (Id) @ 25°C | 20A (Ta) |
| Package | Bulk |
| Base Product Number | CSD87330 |
