CSD16411Q3T
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CSD16411Q3T

Texas Instruments

型号:

CSD16411Q3T

封装:

8-VSON-CLIP (3.3x3.3)

批次:

-

数据手册:

pdf

描述:

PROTOTYPE

购买数量:

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产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 570 pF @ 12.5 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 3.8 nC @ 4.5 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 10mOhm @ 10A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.3V @ 250µA
Supplier Device Package 8-VSON-CLIP (3.3x3.3)
Drain to Source Voltage (Vdss) 25 V
Power Dissipation (Max) 35W (Tc)
Series NexFET™
Package / Case 8-PowerTDFN
Technology MOSFET (Metal Oxide)
Mfr Texas Instruments
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Vgs (Max) +16V, -12V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Bulk
Base Product Number CSD16411