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BUK9Y153-100E,115
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BUK9Y153-100E,115

NXP USA Inc.

型号:

BUK9Y153-100E,115

品牌:

NXP USA Inc.

封装:

LFPAK56, Power-SO8

批次:

-

数据手册:

pdf

描述:

TRANSISTOR >30MHZ

购买数量:

递送:

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产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 716 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 6.8 nC @ 5 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 146mOhm @ 2A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.1V @ 1mA
Supplier Device Package LFPAK56, Power-SO8
Drain to Source Voltage (Vdss) 100 V
Power Dissipation (Max) 37W (Tc)
Series Automotive, AEC-Q101, TrenchMOS™
Package / Case SC-100, SOT-669
Technology MOSFET (Metal Oxide)
Mfr NXP USA Inc.
Current - Continuous Drain (Id) @ 25°C 9.4A (Tc)
Vgs (Max) ±10V
Drive Voltage (Max Rds On, Min Rds On) 5V
Package Bulk