BUK9E2R8-60E,127
NXP USA Inc.
型号:
BUK9E2R8-60E,127
品牌:
封装:
I2PAK
批次:
-
数据手册:
描述:
MOSFET N-CH 60V 120A I2PAK
购买数量:
递送:
付款:
库存 : 请查询
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产品信息
参数信息
用户指南
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 17450 pF @ 25 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 120 nC @ 5 V |
| Mounting Type | Through Hole |
| Rds On (Max) @ Id, Vgs | 2.6mOhm @ 25A, 10V |
| Product Status | Obsolete |
| Vgs(th) (Max) @ Id | 2.1V @ 1mA |
| Supplier Device Package | I2PAK |
| Drain to Source Voltage (Vdss) | 60 V |
| Power Dissipation (Max) | 349W (Tc) |
| Series | TrenchMOS™ |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Technology | MOSFET (Metal Oxide) |
| Mfr | NXP USA Inc. |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Vgs (Max) | ±10V |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Package | Tube |
| Base Product Number | BUK9 |
