BUK6E3R2-55C,127
detaildesc

BUK6E3R2-55C,127

NXP Semiconductors

型号:

BUK6E3R2-55C,127

封装:

I2PAK

批次:

-

数据手册:

pdf

描述:

NEXPERIA BUK6E3R2-55C - 120A, 55

购买数量:

递送:

1.webp 4.webp 5.webp 2.webp 3.webp

付款:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

库存 : 4973

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 287

    $0.9975

    $286.2825

请发送询价,我们将立即回复。

产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 15300 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 258 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 3.2mOhm @ 25A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.8V @ 1mA
Supplier Device Package I2PAK
Drain to Source Voltage (Vdss) 55 V
Power Dissipation (Max) 306W (Tc)
Series Automotive, AEC-Q101, TrenchMOS™
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Technology MOSFET (Metal Oxide)
Mfr NXP Semiconductors
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Vgs (Max) ±16V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Bulk