BSP100,135
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BSP100,135

Nexperia USA Inc.

型号:

BSP100,135

封装:

SOT-223

批次:

-

数据手册:

pdf

描述:

MOSFET N-CH 30V 3.2A SOT223

购买数量:

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产品信息

参数信息

用户指南

Operating Temperature -65°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 250 pF @ 20 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 6 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 100mOhm @ 2.2A, 10V
Product Status Obsolete
Vgs(th) (Max) @ Id 2.8V @ 1mA
Supplier Device Package SOT-223
Drain to Source Voltage (Vdss) 30 V
Power Dissipation (Max) 8.3W (Tc)
Series TrenchMOS™
Package / Case TO-261-4, TO-261AA
Technology MOSFET (Metal Oxide)
Mfr Nexperia USA Inc.
Current - Continuous Drain (Id) @ 25°C 3.2A (Ta)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)