BSM400D12P2G003
detaildesc

BSM400D12P2G003

Rohm Semiconductor

Product No:

BSM400D12P2G003

Manufacturer:

Rohm Semiconductor

Package:

Module

Batch:

-

Datasheet:

-

Description:

SILICON CARBIDE POWER MODULE. B

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

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In Stock : 4

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $2088.974

    $2088.974

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Product Information

Parameter Info

User Guide

Operating Temperature -40°C ~ 150°C (TJ)
FET Feature -
Configuration 2 N-Channel (Half Bridge)
Input Capacitance (Ciss) (Max) @ Vds 38000pF @ 10V
Gate Charge (Qg) (Max) @ Vgs -
Rds On (Max) @ Id, Vgs -
Product Status Active
Vgs(th) (Max) @ Id 4V @ 85mA
Supplier Device Package Module
Drain to Source Voltage (Vdss) 1200V (1.2kV)
Series -
Package / Case Module
Technology Silicon Carbide (SiC)
Power - Max 2450W (Tc)
Mfr Rohm Semiconductor
Current - Continuous Drain (Id) @ 25°C 400A (Tc)
Package Bulk
Base Product Number BSM400