BSM300D12P4G101
detaildesc

BSM300D12P4G101

Rohm Semiconductor

型号:

BSM300D12P4G101

封装:

Module

批次:

-

数据手册:

pdf

描述:

1200V, 291A, HALF BRIDGE, FULL S

购买数量:

递送:

1.webp 4.webp 5.webp 2.webp 3.webp

付款:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

库存 : 4

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $898.111

    $898.111

  • 10

    $884.18495

    $8841.8495

请发送询价,我们将立即回复。

产品信息

参数信息

用户指南

Operating Temperature 175°C (TJ)
FET Feature Standard
Configuration 2 N-Channel
Input Capacitance (Ciss) (Max) @ Vds 30000pF @ 10V
Gate Charge (Qg) (Max) @ Vgs -
Mounting Type Chassis Mount
Rds On (Max) @ Id, Vgs -
Product Status Active
Vgs(th) (Max) @ Id 4.8V @ 145.6mA
Supplier Device Package Module
Drain to Source Voltage (Vdss) 1200V (1.2kV)
Series -
Package / Case Module
Technology Silicon Carbide (SiC)
Power - Max 925W (Tc)
Mfr Rohm Semiconductor
Current - Continuous Drain (Id) @ 25°C 291A (Tc)
Package Box
Base Product Number BSM300