BSM180D12P2C101
Rohm Semiconductor
型号:
BSM180D12P2C101
封装:
Module
批次:
-
数据手册:
描述:
MOSFET 2N-CH 1200V 180A MODULE
购买数量:
递送:
付款:
库存 : 1
最小起订量: 1 最小递增量: 1
数量
单价
总价
1
$448.552
$448.552
10
$435.06105
$4350.6105
请发送询价，我们将立即回复。
产品信息
参数信息
用户指南
| Operating Temperature | -40°C ~ 150°C (TJ) |
| FET Feature | - |
| Configuration | 2 N-Channel (Half Bridge) |
| Input Capacitance (Ciss) (Max) @ Vds | 23000pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs | - |
| Rds On (Max) @ Id, Vgs | - |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4V @ 35.2mA |
| Supplier Device Package | Module |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Series | - |
| Package / Case | Module |
| Technology | Silicon Carbide (SiC) |
| Power - Max | 1130W |
| Mfr | Rohm Semiconductor |
| Current - Continuous Drain (Id) @ 25°C | 204A (Tc) |
| Package | Bulk |
| Base Product Number | BSM180 |
