BSM120D12P2C005
Rohm Semiconductor
Product No:
BSM120D12P2C005
Manufacturer:
Package:
Module
Batch:
-
Datasheet:
Description:
MOSFET 2N-CH 1200V 120A MODULE
Quantity:
Delivery:
Payment:
In Stock : 19
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$375.459
$375.459
10
$364.1673
$3641.673
Not the price you want? Send RFQ Now and we'll contact you ASAP.
Product Information
Parameter Info
User Guide
| Operating Temperature | -40°C ~ 150°C (TJ) |
| FET Feature | - |
| Configuration | 2 N-Channel (Half Bridge) |
| Input Capacitance (Ciss) (Max) @ Vds | 14000pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs | - |
| Rds On (Max) @ Id, Vgs | - |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 2.7V @ 22mA |
| Supplier Device Package | Module |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Series | - |
| Package / Case | Module |
| Technology | Silicon Carbide (SiC) |
| Power - Max | 780W |
| Mfr | Rohm Semiconductor |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Package | Bulk |
| Base Product Number | BSM120 |
Recommended Parts
BSM120D12P2C005 Related Blog
哪种内存类型有针脚 PC 连接器
2025-09-12 875
New product release | Daoheshun infrared methane sensor, guarding the "last pass" of gas safety
2025-09-02 488
Basic knowledge of crystal vibration, circuit design, non-vibration reasons, circuit principle, crystal frequency, digital circuit application (crystal vibration data download)
2025-09-02 677
Purchase must see! Electronic component selection from entry to give up
2025-09-02 1411
2000+Daily average RFQ Volume
30,000,000Standard Product Unit
2800+Worldwide Manufacturers
15,000 ㎡In-stock Warehouse
Information
Payment
Quick Links
Feedback