BSM120D12P2C005
detaildesc

BSM120D12P2C005

Rohm Semiconductor

型号:

BSM120D12P2C005

封装:

Module

批次:

-

数据手册:

pdf

描述:

MOSFET 2N-CH 1200V 120A MODULE

购买数量:

递送:

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付款:

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库存 : 19

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $375.459

    $375.459

  • 10

    $364.1673

    $3641.673

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产品信息

参数信息

用户指南

Operating Temperature -40°C ~ 150°C (TJ)
FET Feature -
Configuration 2 N-Channel (Half Bridge)
Input Capacitance (Ciss) (Max) @ Vds 14000pF @ 10V
Gate Charge (Qg) (Max) @ Vgs -
Rds On (Max) @ Id, Vgs -
Product Status Active
Vgs(th) (Max) @ Id 2.7V @ 22mA
Supplier Device Package Module
Drain to Source Voltage (Vdss) 1200V (1.2kV)
Series -
Package / Case Module
Technology Silicon Carbide (SiC)
Power - Max 780W
Mfr Rohm Semiconductor
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Package Bulk
Base Product Number BSM120