BSM080D12P2C008
detaildesc

BSM080D12P2C008

Rohm Semiconductor

型号:

BSM080D12P2C008

封装:

Module

批次:

-

数据手册:

pdf

描述:

SIC POWER MODULE-1200V-80A

购买数量:

递送:

1.webp 4.webp 5.webp 2.webp 3.webp

付款:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

库存 : 21

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $325.4035

    $325.4035

  • 12

    $315.612962

    $3787.355544

请发送询价,我们将立即回复。

产品信息

参数信息

用户指南

Operating Temperature 175°C (TJ)
FET Feature -
Configuration 2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds 800pF @ 10V
Gate Charge (Qg) (Max) @ Vgs -
Mounting Type Chassis Mount
Rds On (Max) @ Id, Vgs -
Product Status Active
Vgs(th) (Max) @ Id 4V @ 13.2mA
Supplier Device Package Module
Drain to Source Voltage (Vdss) 1200V (1.2kV)
Series -
Package / Case Module
Technology Silicon Carbide (SiC)
Power - Max 600W
Mfr Rohm Semiconductor
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Package Tray
Base Product Number BSM080