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AR1FJ-M3/I
Vishay General Semiconductor - Diodes Division
型号:
AR1FJ-M3/I
封装:
DO-219AB (SMF)
批次:
-
数据手册:
描述:
DIODE AVALANCHE 600V 1A DO219AB
购买数量:
递送:
付款:
库存 : 19995
最小起订量: 1 最小递增量: 1
数量
单价
总价
1
$0.418
$0.418
10
$0.29735
$2.9735
100
$0.150005
$15.0005
500
$0.132905
$66.4525
1000
$0.103436
$103.436
2000
$0.092578
$185.156
5000
$0.090506
$452.53
请发送询价，我们将立即回复。
产品信息
参数信息
用户指南
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Capacitance @ Vr, F | 12.6pF @ 4V, 1MHz |
| Reverse Recovery Time (trr) | 140 ns |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Supplier Device Package | DO-219AB (SMF) |
| Current - Reverse Leakage @ Vr | 1 µA @ 600 V |
| Series | Automotive, AEC-Q101 |
| Package / Case | DO-219AB |
| Technology | Avalanche |
| Voltage - Forward (Vf) (Max) @ If | 1.25 V @ 1 A |
| Mfr | Vishay General Semiconductor - Diodes Division |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Package | Tape & Reel (TR) |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Current - Average Rectified (Io) | 1A |
