APTM120SK56T1G
detaildesc

APTM120SK56T1G

Microsemi Corporation

型号:

APTM120SK56T1G

封装:

SP1

批次:

-

数据手册:

pdf

描述:

MOSFET N-CH 1200V 18A SP1

购买数量:

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产品信息

参数信息

用户指南

Operating Temperature -40°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 7736 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 300 nC @ 10 V
Mounting Type Chassis Mount
Rds On (Max) @ Id, Vgs 672mOhm @ 14A, 10V
Product Status Obsolete
Vgs(th) (Max) @ Id 5V @ 2.5mA
Supplier Device Package SP1
Drain to Source Voltage (Vdss) 1200 V
Power Dissipation (Max) 390W (Tc)
Series -
Package / Case SP1
Technology MOSFET (Metal Oxide)
Mfr Microsemi Corporation
Current - Continuous Drain (Id) @ 25°C 18A (Tc)
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Bulk