APTM120H57FT3G
Microsemi Corporation
型号:
APTM120H57FT3G
封装:
SP3
批次:
-
数据手册:
描述:
MOSFET 4N-CH 1200V 17A SP3
购买数量:
递送:
付款:
库存 : 请查询
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产品信息
参数信息
用户指南
| Operating Temperature | -40°C ~ 150°C (TJ) |
| FET Feature | - |
| Configuration | 4 N-Channel (Half Bridge) |
| Input Capacitance (Ciss) (Max) @ Vds | 5155pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs | 187nC @ 10V |
| Mounting Type | Chassis Mount |
| Rds On (Max) @ Id, Vgs | 684mOhm @ 8.5A, 10V |
| Product Status | Obsolete |
| Vgs(th) (Max) @ Id | 5V @ 2.5mA |
| Supplier Device Package | SP3 |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Series | - |
| Package / Case | SP3 |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 390W |
| Mfr | Microsemi Corporation |
| Current - Continuous Drain (Id) @ 25°C | 17A |
| Package | Bulk |
| Base Product Number | APTM120 |
