APTC60DAM35T1G
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APTC60DAM35T1G

Microsemi Corporation

型号:

APTC60DAM35T1G

封装:

SP1

批次:

-

数据手册:

pdf

描述:

MOSFET N-CH 600V 72A SP1

购买数量:

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产品信息

参数信息

用户指南

Operating Temperature -40°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 14000 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 518 nC @ 10 V
Mounting Type Chassis Mount
Rds On (Max) @ Id, Vgs 35mOhm @ 72A, 10V
Product Status Obsolete
Vgs(th) (Max) @ Id 3.9V @ 5.4mA
Supplier Device Package SP1
Drain to Source Voltage (Vdss) 600 V
Power Dissipation (Max) 416W (Tc)
Series -
Package / Case SP1
Technology MOSFET (Metal Oxide)
Mfr Microsemi Corporation
Current - Continuous Drain (Id) @ 25°C 72A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Bulk