1N8035-GA
GeneSiC Semiconductor
型号:
1N8035-GA
封装:
TO-276
批次:
-
数据手册:
-
描述:
DIODE SIL CARB 650V 14.6A TO276
购买数量:
递送:
付款:
库存 : 请查询
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产品信息
参数信息
用户指南
| Speed | No Recovery Time > 500mA (Io) |
| Capacitance @ Vr, F | 1107pF @ 1V, 1MHz |
| Reverse Recovery Time (trr) | 0 ns |
| Mounting Type | Surface Mount |
| Product Status | Obsolete |
| Supplier Device Package | TO-276 |
| Current - Reverse Leakage @ Vr | 5 µA @ 650 V |
| Series | - |
| Package / Case | TO-276AA |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - Forward (Vf) (Max) @ If | 1.5 V @ 15 A |
| Mfr | GeneSiC Semiconductor |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Package | Tube |
| Operating Temperature - Junction | -55°C ~ 250°C |
| Current - Average Rectified (Io) | 14.6A |
| Base Product Number | 1N8035 |
