1N6630US
detaildesc

1N6630US

Microchip Technology

型号:

1N6630US

封装:

D-5B

批次:

-

数据手册:

pdf

描述:

DIODE GEN PURP 900V 1.4A D-5B

购买数量:

递送:

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付款:

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产品信息

参数信息

用户指南

Speed Fast Recovery =< 500ns, > 200mA (Io)
Capacitance @ Vr, F -
Reverse Recovery Time (trr) 50 ns
Mounting Type Surface Mount
Product Status Active
Supplier Device Package D-5B
Current - Reverse Leakage @ Vr 4 µA @ 100 V
Series -
Package / Case SQ-MELF, E
Technology Standard
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 3 A
Mfr Microchip Technology
Voltage - DC Reverse (Vr) (Max) 900 V
Package Bulk
Operating Temperature - Junction -65°C ~ 150°C
Current - Average Rectified (Io) 1.4A
Base Product Number 1N6630