首页 / 单 FET,MOSFET / IPI70P04P409AKSA1
IPI70P04P409AKSA1
detaildesc

IPI70P04P409AKSA1

Infineon Technologies

型号:

IPI70P04P409AKSA1

封装:

PG-TO262-3-1

批次:

-

数据手册:

pdf

描述:

MOSFET N-CH 40V 72A TO262-3

购买数量:

递送:

1.webp 4.webp 5.webp 2.webp 3.webp

付款:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

库存 : 请查询

请发送RFQ,我们将立即回复。

产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 4810 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 70 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 9.4mOhm @ 70A, 10V
Product Status Obsolete
Vgs(th) (Max) @ Id 4V @ 120µA
Supplier Device Package PG-TO262-3-1
Drain to Source Voltage (Vdss) 40 V
Power Dissipation (Max) 75W (Tc)
Series Automotive, AEC-Q101, OptiMOS™
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Technology MOSFET (Metal Oxide)
Mfr Infineon Technologies
Current - Continuous Drain (Id) @ 25°C 72A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number IPI70P